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Analyze of input process parameter variation on threshold voltage in 45nm n-channel MOSFET

In this paper, Taguchi method was used to analyze of input process parameters variations on threshold voltage (V TH) in 45nm n-channel Metal Oxide Semiconductor device. The orthogonal array, the signal-to-noise ratio, and analysis of variance are employed to study the performance characteristics of...

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Bibliographic Details
Main Authors:	Salehuddin, F., Ahmad, I., Hamid, F.A., Zaharim, A., Elgomati, H.A., Majlis, B.Y.
Format:	Conference Proceeding
Published:	2017
Online Access:	http://dspace.uniten.edu.my:80/jspui/handle/123456789/5236
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