Characterization and optimizations of silicide thickness in 45nm pMOS device
The characteristics of high performance 45nm pMOS devices based on International Technology Roadmap for Semiconductor (ITRS) have been studied using ATHENA and ATLAS's simulator. There are four factors were varied for 3 levels to perform 9 experiments. The factors are halo implantation, Source/...
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| 主要な著者: | , , , |
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| フォーマット: | 会議録 |
| 出版事項: |
2017
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| オンライン･アクセス: | http://dspace.uniten.edu.my:80/jspui/handle/123456789/5252 |
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