Effect of process parameter variations on threshold voltage in 45nm NMOS device
Taguchi method was used to optimize of the effect process parameter variations on threshold voltage in 45nm NMOS device. In this paper, there are four process parameters (factors) were used, which are Halo Implantation, Source/Drain (S/D) Implantation, Oxide Growth Temperature and Silicide Anneal te...
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| Main Authors: | , , , |
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| Format: | Conference Proceeding |
| Published: |
2017
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| Online Access: | http://dspace.uniten.edu.my:80/jspui/handle/123456789/5245 |
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