Analyze of input process parameter variation on threshold voltage in 45nm n-channel MOSFET
In this paper, Taguchi method was used to analyze of input process parameters variations on threshold voltage (V TH) in 45nm n-channel Metal Oxide Semiconductor device. The orthogonal array, the signal-to-noise ratio, and analysis of variance are employed to study the performance characteristics of...
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| Main Authors: | , , , , , |
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| 格式: | Conference Proceeding |
| 出版: |
2017
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| 在線閱讀: | http://dspace.uniten.edu.my:80/jspui/handle/123456789/5236 |
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