持有資料: Analyze and optimize the silicide thickness in 45nm CMOS technology using Taguchi method

Analyze and optimize the silicide thickness in 45nm CMOS technology using Taguchi method

Taguchi method was used to analyze the experimental data in order to get the optimum average of silicide thickness in 45nm devices. The virtually fabrication of the devices was performed by using ATHENA module. While the electrical characterization of the devices was implemented by using ATLAS modul...

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書目詳細資料
Main Authors:	Salehuddin F., Ahmad I., Hamid F.A., Zaharim A.
其他作者:	36239165300
格式:	Conference Paper
出版:	2023
主題:	Cobalt salicide Optimizations of 45nm CMOS Silvaco Taguchi method CMOS integrated circuits Cobalt Cobalt compounds Design Optimization Semiconductor growth Silicides Taguchi methods Threshold voltage Anneal temperatures CMOS technology Design time Design tool Electrical characterization Experimental data Halo implantation NMOS devices Optimal process Optimizers Oxide growth PMOS devices Process parameters Response characteristic Taguchi MOS devices
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Analyze and optimize the silicide thickness in 45nm CMOS technology using Taguchi method

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