Optimization of HALO structure effects in 45nm p-type MOSFETs device using taguchi method
In this study, the Taguchi method was used to optimize the effect of HALO structure or halo implant variations on threshold voltage (VTH) and leakage current (ILeak) in 45nm p-type Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) device. Besides halo implant dose, the other process param...
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| 主要な著者: | , , , , , , |
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| フォーマット: | |
| 出版事項: |
2017
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| オンライン･アクセス: | http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5242 |
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