المقتنيات: Optimization of process parameter variation in 45nm p-channel MOSFET using L18 orthogonal array

Optimization of process parameter variation in 45nm p-channel MOSFET using L18 orthogonal array

In this study, orthogonal array of L18 in Taguchi method was used to optimize the process parameters variance on threshold voltage (V TH) in 45nm p-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) device. The signal-to-noise (S/N) ratio and analysis of variance (ANOVA) are employed...

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التفاصيل البيبلوغرافية
المؤلفون الرئيسيون:	Salehuddin F., Ahmad I., Hamid F.A., Zaharim A., Hamid A.M.A., Menon P.S., Elgomati H.A., Majlis B.Y., Apte P.R.
مؤلفون آخرون:	36239165300
التنسيق:	Conference paper
منشور في:	2023
الموضوعات:	Leakage Current NMOS Device Taguchi Method Threshold Voltage Electron beam lithography Experiments Leakage currents Optimization Simulators Taguchi methods Threshold voltage 3 levels Adjustment factors Control factors Device simulators Major factors MOS-FET NMOS devices Noise factor Nominal values Optimization of process parameters Orthogonal array P channels Performance characteristics pMOS devices Process parameters Process simulators Signal to noise (S/N) ratios MOSFET devices
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Optimization of process parameter variation in 45nm p-channel MOSFET using L18 orthogonal array

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