Optimization of process parameter variation in 45nm p-channel MOSFET using L18 orthogonal array
In this study, orthogonal array of L18 in Taguchi method was used to optimize the process parameters variance on threshold voltage (V TH) in 45nm p-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) device. The signal-to-noise (S/N) ratio and analysis of variance (ANOVA) are employed...
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| Main Authors: | , , , , , , , , |
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| 格式: | Conference Proceeding |
| 出版: |
2017
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| 在线阅读: | http://dspace.uniten.edu.my:80/jspui/handle/123456789/5225 |
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