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Optimization of process parameter variation in 45nm p-channel MOSFET using L18 orthogonal array

In this study, orthogonal array of L18 in Taguchi method was used to optimize the process parameters variance on threshold voltage (V TH) in 45nm p-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) device. The signal-to-noise (S/N) ratio and analysis of variance (ANOVA) are employed...

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書誌詳細
主要な著者:	Salehuddin, F., Ahmad, I., Hamid, F.A., Zaharim, A., Hamid, A.M.A., Menon, P.S., Elgomati, H.A., Majlis, B.Y., Apte, P.R.
フォーマット:	会議録
出版事項:	2017
オンライン･アクセス:	http://dspace.uniten.edu.my:80/jspui/handle/123456789/5225
タグ:	タグ追加タグなし, このレコードへの初めてのタグを付けませんか!

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