Optimization of process parameter variation in 45nm p-channel MOSFET using L18 orthogonal array
In this study, orthogonal array of L18 in Taguchi method was used to optimize the process parameters variance on threshold voltage (V TH) in 45nm p-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) device. The signal-to-noise (S/N) ratio and analysis of variance (ANOVA) are employed...
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| 主要な著者: | , , , , , , , , |
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| フォーマット: | 会議録 |
| 出版事項: |
2017
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| オンライン･アクセス: | http://dspace.uniten.edu.my:80/jspui/handle/123456789/5225 |
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