封面图片

Characterization of fabrication process noises for 32nm NMOS devices

This paper describes the effect of fabrication process noises to Sub-nanometer devices, which in this case a 32nm NMOS transistor. This experiment a part of a full Taguchi Method analysis to obtain an optimum fabrication recipe for the said transistor. The two noises introduced in the fabrication is...

Saved in:

书目详细资料
Main Authors:	Elgomati, H.A., Majlis, B.Y., Ahmad, I., Ziad, T.
格式:
出版:	2017
在线阅读:	http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5248
标签:	添加标签没有标签, 成为第一个标记此记录!

相似书籍

Characterization of fabrication process noises for 32nm NMOS devices
由: Elgomati H.A., et al.
出版: (2023)

Scaling down of the 32 nm to 22 nm gate length NMOS transistor
由: Afifah Maheran, A.H., et al.
出版: (2017)

Scaling down of the 32 nm to 22 nm gate length NMOS transistor
由: Afifah Maheran A.H., et al.
出版: (2023)

Modeling and optimizing of threshold voltage of 32nm NMOS transistor using L18 orthogonal array Taguchi method
由: Elgomati, H.A., et al.
出版: (2017)

Modeling and optimizing of threshold voltage of 32nm NMOS transistor using L18 orthogonal array Taguchi method
由: Elgomati H.A., et al.
出版: (2023)

Design and optimization of 22nm NMOS transistor
由: Afifah Maheran, A.H., et al.
出版: (2017)

Design and optimization of 22nm NMOS transistor
由: Afifah Maheran A.H., et al.
出版: (2023)

Influence of process parameters on threshold voltage and leakage current in 18nm NMOS device
由: Atan, N.B., et al.
出版: (2017)

Influence of process parameters on threshold voltage and leakage current in 18nm NMOS device
由: Atan, N.B., et al.
出版: (2017)

Influence of process parameters on threshold voltage and leakage current in 18nm NMOS device
由: Atan N.B., et al.
出版: (2023)

Optimizing 35nm NMOS devices V TH and I LEAK by controlling active area and halo implantation dosage
由: Elgomati, H.A., et al.
出版: (2017)

Optimizing 35nm NMOS devices V TH and I LEAK by controlling active area and halo implantation dosage
由: Elgomati H.A., et al.
出版: (2023)

Modelling of process parameters for 32nm PMOS transistor using Taguchi method
由: Elgomati, H.A., et al.
出版: (2017)

Modelling of process parameters for 32nm PMOS transistor using Taguchi method
由: Elgomati H.A., et al.
出版: (2023)

Effects of high-K dielectrics with metal gate for electrical characteristics of 18nm NMOS device
由: Atan, N.B., et al.
出版: (2017)

Effects of high-K dielectrics with metal gate for electrical characteristics of 18nm NMOS device
由: Atan N.B., et al.
出版: (2023)

Application of Taguchi method in the optimization of process variation for 32nm CMOS technology
由: Elgomati, H.A., et al.
出版: (2017)

Application of Taguchi method in the optimization of process variation for 32nm CMOS technology
由: Elgomati H.A., et al.
出版: (2023)

Effect of process parameter variations on threshold voltage in 45nm NMOS device
由: Salehuddin, F., et al.
出版: (2017)

Effect of process parameter variations on threshold voltage in 45nm NMOS device
由: Salehuddin F., et al.
出版: (2023)

Statistical optimization for process parameters to reduce variability of 32 nm PMOS transistor threshold voltage
由: Elgomati, H.A., et al.
出版: (2017)

Statistical optimization for process parameters to reduce variability of 32 nm PMOS transistor threshold voltage
由: Elgomati H.A., et al.
出版: (2023)

Optimization of input process parameters variation on threshold voltage in 45 nm NMOS device
由: Salehuddin, F., et al.
出版: (2017)

Optimization of input process parameters variation on threshold voltage in 45 nm NMOS device
由: Salehuddin F., et al.
出版: (2023)

Design and optimization of 22 nm gate length high-k/metal gate NMOS transistor
由: Afifah Maheran, A.H., et al.
出版: (2017)

Design and optimization of 22 nm gate length high-k/metal gate NMOS transistor
由: Afifah Maheran A.H., et al.
出版: (2023)

Optimization of input process parameters variation on threshold voltage in 45 nm NMOS device
由: Fauziyah , Salehuddin
出版: (2011)

Fabrication and characterization of 130nm NMOS using silvaco software / Mas Fezah Latib
由: Latib, Mas Fezah
出版: (2007)

Impact of different dose and angle in HALO structure for 45nm NMOS device
由: Salehuddin, F., et al.
出版: (2017)

Impact of different dose and angle in HALO structure for 45nm NMOS device
由: Salehuddin F., et al.
出版: (2023)

Impact of HALO structure on threshold voltage and leakage current in 45nm NMOS device
由: Salehuddin, F., et al.
出版: (2017)

Impact of HALO structure on threshold voltage and leakage current in 45nm NMOS device
由: Salehuddin F., et al.
出版: (2023)

Impact of Different Dose and Angle in HALO Structure for 45nm NMOS Device
由: Fauziyah, Salehuddin
出版: (2012)

Control factors optimization on threshold voltage and leakage current in 22 nm NMOS transistor using Taguchi method
由: Afifah Maheran, A.H., et al.
出版: (2017)

Control factors optimization on threshold voltage and leakage current in 22 nm NMOS transistor using Taguchi method
由: Afifah Maheran A.H., et al.
出版: (2023)

Statistical process modelling for 32nm high-K/metal gate PMOS device
由: Maheran, A.H.A., et al.
出版: (2017)

Statistical process modelling for 32nm high-K/metal gate PMOS device
由: Maheran A.H.A., et al.
出版: (2023)

Simulation, fabrication and characterization of NMOS transistor
由: Rifai, Damhuji
出版: (2006)

Simulation, fabrication and characterization of NMOS transistor
由: Rifai, Damhuji
出版: (2006)

Influence of optimization of control factors on threshold voltage of 18 nm HfO2/TiSi2 NMOS
由: Atan, N.B., et al.
出版: (2020)