Design and optimization of 22 nm gate length high-k/metal gate NMOS transistor
In this paper, we invented the optimization experiment design of a 22 nm gate length NMOS device which uses a combination of high-k material and metal as the gate which was numerically developed using an industrial-based simulator. The high-k material is Titanium dioxide (TiO2), while the metal gate...
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| Main Authors: | , , , , , |
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| Format: | |
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2017
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| Online Access: | http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5217 |
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