Characterization of fabrication process noises for 32nm NMOS devices

This paper describes the effect of fabrication process noises to Sub-nanometer devices, which in this case a 32nm NMOS transistor. This experiment a part of a full Taguchi Method analysis to obtain an optimum fabrication recipe for the said transistor. The two noises introduced in the fabrication is...

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Bibliographic Details
Main Authors: Elgomati, H.A., Majlis, B.Y., Ahmad, I., Ziad, T.
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Published: 2017
Online Access:http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5248
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