Effect of process parameter variations on threshold voltage in 45nm NMOS device

Taguchi method was used to optimize of the effect process parameter variations on threshold voltage in 45nm NMOS device. In this paper, there are four process parameters (factors) were used, which are Halo Implantation, Source/Drain (S/D) Implantation, Oxide Growth Temperature and Silicide Anneal te...

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Bibliographic Details
Main Authors: Salehuddin, F., Ahmad, I., Hamid, F.A., Zaharim, A.
Format: Conference Proceeding
Published: 2017
Online Access:http://dspace.uniten.edu.my:80/jspui/handle/123456789/5245
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