Thermal characterization and stress analysis of Ho2O3 thin film on 4H-SiC substrate
The performance of a metal oxide semiconductor during operation could be hindered significantly due to thermodynamic instability and mismatch between the gate oxide layer and the substrate. Owing to variation in temperature during thermal applications, the thin film layers and substrates in compleme...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Published: |
Elsevier
2022
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| Subjects: | |
| Online Access: | http://eprints.um.edu.my/41036/ |
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