Physical and electrical characteristics of Ho2O3 thin film based on 4H-SiC wide bandgap semiconductor
The continuous down-sizing of metal oxide semiconductor field effect transistors have been confronted with various challenges in the last few decades, ranging from aggressive reduction of channel to miniaturization of dielectric gate thickness. In a bid to proffer solution to these challenges, a hig...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Published: |
Elsevier Science SA
2022
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| Subjects: | |
| Online Access: | http://eprints.um.edu.my/33684/ |
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