Formation of Zr- oxynitride thin films on 4H-SiC substrate
Formation of Zr-oxynitride by simultaneous oxidation and nitridation in nitrous oxide of sputtered Zr on SiC substrate is reported. Sputtered Zr on SiC substrate and followed by oxidation and nitridation in nitrous oxide ambient for 15 min at different temperatures (400–900 °C) have been systematica...
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| Main Authors: | , |
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| Format: | Article |
| Published: |
Elsevier
2012
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| Online Access: | http://eprints.um.edu.my/13001/ http://www.sciencedirect.com/science/article/pii/S0040609012008851 http://dx.doi.org/10.1016/j.tsf.2012.07.036 |
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