持有资料: Silicon carbide (SiC) as non-volatile random access memory (NVRAM) material

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书目详细资料
主要作者:	Cheong, Kuan Yew, Dr.
格式:	Article
语言:	English
出版:	The Institution of Engineers, Malaysia 2011
主题:	Metal-oxide semiconductor (MOS) Nitrided gate oxide Silicon carbide (SiC) Nonvolatile random-access memory (NVRAM)
在线阅读:	http://dspace.unimap.edu.my/xmlui/handle/123456789/13826
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