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Thermal characterization and stress analysis of Ho2O3 thin film on 4H-SiC substrate

The performance of a metal oxide semiconductor during operation could be hindered significantly due to thermodynamic instability and mismatch between the gate oxide layer and the substrate. Owing to variation in temperature during thermal applications, the thin film layers and substrates in compleme...

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Main Authors:	Odesanya, Kazeem Olabisi, Ahmad, Roslina, Andriyana, Andri, Bingol, Sedat, Cetinkaya, Ridvan, Wong, Yew Hoong
Format:	Article
Published:	Elsevier 2022
Subjects:	TJ Mechanical engineering and machinery
Online Access:	http://eprints.um.edu.my/41036/
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spelling	my.um.eprints.410362023-07-14T07:26:11Z http://eprints.um.edu.my/41036/ Thermal characterization and stress analysis of Ho2O3 thin film on 4H-SiC substrate Odesanya, Kazeem Olabisi Ahmad, Roslina Andriyana, Andri Bingol, Sedat Cetinkaya, Ridvan Wong, Yew Hoong TJ Mechanical engineering and machinery The performance of a metal oxide semiconductor during operation could be hindered significantly due to thermodynamic instability and mismatch between the gate oxide layer and the substrate. Owing to variation in temperature during thermal applications, the thin film layers and substrates in complementary metal oxide semiconductor (CMOS) structures are subjected to high thermal stresses, which can result in large deformation and failure. In this study, the distribution of heat and thermal stress between the Ho2O3 thin film and the SiC substrate has been simulated numerically with finite element modelling and analysis software (ANSYS). This is necessary to emulate the thermal behaviour of the structure under different thermal loadings, and for each temperature loading, the effects of thermal stress and deformation on the structure were also evaluated. Based on the results of the simulation, an optimum temperature was suggested. The thermal stability and characteristics of the thin film layer/SiC structure were evaluated and validated for better electrical performance. Elsevier 2022-12 Article PeerReviewed Odesanya, Kazeem Olabisi and Ahmad, Roslina and Andriyana, Andri and Bingol, Sedat and Cetinkaya, Ridvan and Wong, Yew Hoong (2022) Thermal characterization and stress analysis of Ho2O3 thin film on 4H-SiC substrate. Materials Science in Semiconductor Processing, 152. ISSN 1369-8001, DOI https://doi.org/10.1016/j.mssp.2022.107110 <https://doi.org/10.1016/j.mssp.2022.107110>. 10.1016/j.mssp.2022.107110
institution	Universiti Malaya
building	UM Library
collection	Institutional Repository
continent	Asia
country	Malaysia
content_provider	Universiti Malaya
content_source	UM Research Repository
url_provider	http://eprints.um.edu.my/
topic	TJ Mechanical engineering and machinery
spellingShingle	TJ Mechanical engineering and machinery Odesanya, Kazeem Olabisi Ahmad, Roslina Andriyana, Andri Bingol, Sedat Cetinkaya, Ridvan Wong, Yew Hoong Thermal characterization and stress analysis of Ho2O3 thin film on 4H-SiC substrate
description	The performance of a metal oxide semiconductor during operation could be hindered significantly due to thermodynamic instability and mismatch between the gate oxide layer and the substrate. Owing to variation in temperature during thermal applications, the thin film layers and substrates in complementary metal oxide semiconductor (CMOS) structures are subjected to high thermal stresses, which can result in large deformation and failure. In this study, the distribution of heat and thermal stress between the Ho2O3 thin film and the SiC substrate has been simulated numerically with finite element modelling and analysis software (ANSYS). This is necessary to emulate the thermal behaviour of the structure under different thermal loadings, and for each temperature loading, the effects of thermal stress and deformation on the structure were also evaluated. Based on the results of the simulation, an optimum temperature was suggested. The thermal stability and characteristics of the thin film layer/SiC structure were evaluated and validated for better electrical performance.
format	Article
author	Odesanya, Kazeem Olabisi Ahmad, Roslina Andriyana, Andri Bingol, Sedat Cetinkaya, Ridvan Wong, Yew Hoong
author_facet	Odesanya, Kazeem Olabisi Ahmad, Roslina Andriyana, Andri Bingol, Sedat Cetinkaya, Ridvan Wong, Yew Hoong
author_sort	Odesanya, Kazeem Olabisi
title	Thermal characterization and stress analysis of Ho2O3 thin film on 4H-SiC substrate
title_short	Thermal characterization and stress analysis of Ho2O3 thin film on 4H-SiC substrate
title_full	Thermal characterization and stress analysis of Ho2O3 thin film on 4H-SiC substrate
title_fullStr	Thermal characterization and stress analysis of Ho2O3 thin film on 4H-SiC substrate
title_full_unstemmed	Thermal characterization and stress analysis of Ho2O3 thin film on 4H-SiC substrate
title_sort	thermal characterization and stress analysis of ho2o3 thin film on 4h-sic substrate
publisher	Elsevier
publishDate	2022
url	http://eprints.um.edu.my/41036/
_version_	1772811761196466176
score	13.211869

Thermal characterization and stress analysis of Ho2O3 thin film on 4H-SiC substrate

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