Heteroepitaxial growth of 3C-SiC on Si substrates by rapid thermal triode plasma CVD using dimethylsilane at low temperature
The investigation of the dependence of the cubic silicon carbide (3C-SiC) film characteristics on the reaction pressures, growth temperatures and hydrogen dilution rates was carried out by rapid thermal triode plasma CVD using dimethylsilane as a source gas. The stoichiometric 3C-SiC films with good...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English English |
| Published: |
Penerbit UTM Press
2009
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/13363/2/AbdulManafHashim2009_HeteroepitaxialGrowth.pdf http://eprints.utm.my/id/eprint/13363/1/163 http://eprints.utm.my/id/eprint/13363/ |
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