Impact of different dose and angle in HALO structure for 45nm NMOS device
In this paper, we investigates the different dose and tilt HALO implant step in order to characterize the 45nm NMOS device. Besides HALO, the other two process parameters are oxide growth temperature and source/drain (S/D) implant dose. The settings of process parameters were determined by using Tag...
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| Main Authors: | , , , |
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| Format: | Conference Proceeding |
| Published: |
2017
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| Online Access: | http://dspace.uniten.edu.my:80/jspui/handle/123456789/5229 |
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