Development of holmium oxide thin film as high-K gate dielectric based on silicon carbide substrate / Odesanya Kazeem Olabisi
This thesis investigates the formation of holmium oxide (Ho2O3) thin film on silicon carbide (SiC) substrate by sputtering and thermal oxidation. The effects of thermal oxidation on the physical, chemical and electrical features of the resulting Ho2O3 layers were evaluated experimentally at various...
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| Format: | Thesis |
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2022
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| Online Access: | http://studentsrepo.um.edu.my/14942/1/Odesanya_Kazeem.pdf http://studentsrepo.um.edu.my/14942/ |
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