3D structures for silicon carbide transistors utilising Al2O3 as a gate dielectric
This paper reports on the first investigation of the characteristics of 3D structures formed in silicon carbide for the realisation of ultra-high performance nanoscale transistors, based on the FINFET topology. Capacitance–voltage characteristics show evidence of a second flatband voltage, located a...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier Ltd
2021
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| Online Access: | http://eprints.utem.edu.my/id/eprint/25843/2/1-S2.0-S136980012100069X-MAIN.PDF http://eprints.utem.edu.my/id/eprint/25843/ https://reader.elsevier.com/reader/sd/pii/S136980012100069X?token=2778C67FA51365617A27C417C9A74A051FF4989CC5C4C92F546260B2FAA352A60EB21B144D009CF8C6B57B4F60EF1D28&originRegion=eu-west-1&originCreation=20220315075818 |
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http://eprints.utem.edu.my/id/eprint/25843/2/1-S2.0-S136980012100069X-MAIN.PDFhttp://eprints.utem.edu.my/id/eprint/25843/
https://reader.elsevier.com/reader/sd/pii/S136980012100069X?token=2778C67FA51365617A27C417C9A74A051FF4989CC5C4C92F546260B2FAA352A60EB21B144D009CF8C6B57B4F60EF1D28&originRegion=eu-west-1&originCreation=20220315075818