Samarium oxide and samarium oxynitride thin film gate oxides on silicon substrate / Goh Kian Heng
Sputtered pure samarium (Sm) metal films on silicon substrates were thermally oxidized and oxynitrided at various temperatures (600 – 900 °C) and durations (5 – 20 min). Effects of thermal oxidation ambient in oxygen (O2) and nitrous oxide (N2O) gas ambient on the physical and electrical properti...
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| Format: | Thesis |
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2017
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| Online Access: | http://studentsrepo.um.edu.my/7132/4/kian_heng.pdf http://studentsrepo.um.edu.my/7132/ |
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