Formation and characterization of rare earth oxides as high-K gate dielectrics on germanium substrate / Tahsin Ahmed Mozaffor Onik

In this study, Sm2O3/Ge and Ho2O3/Ge stack based metal oxide semiconductor (MOS) capacitors were prepared from radio frequency (RF) sputtered metallic Sm on Ge sub-strate and metallic Ho on Ge substrate followed by thermal oxidation/nitridation in N2O ambient. The effects of several oxidation/nitrid...

Full description

Saved in:
Bibliographic Details
Main Author: Tahsin Ahmed , Mozaffor Onik
Format: Thesis
Published: 2022
Subjects:
Online Access:http://studentsrepo.um.edu.my/15042/2/Tahsin_Ahmed.pdf
http://studentsrepo.um.edu.my/15042/1/Tahsin_Ahmed.pdf
http://studentsrepo.um.edu.my/15042/
Tags: Add Tag
No Tags, Be the first to tag this record!