Electrical characterization of different high-k dielectrics with tungsten silicide in vertical double gate nmos structure
The limitation of Poly-Si/ SiO2 devices in producing a greater value of drive current (ION) has become a major issue, especially for very small scale devices. It is believed that the problem may be resolved by introducing metalgate/ high-k dielectrics to replace traditional Poly-Si/SiO2 technology....
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| Main Authors: | , , , , , |
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2017
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| Online Access: | http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5194 |
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