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Silicon nanohole arrays fabricated by electron beam lithography and reactive ion etching

The fabrication of silicon nanohole (SiNH) using a combination of electron beam lithography (EBL) and reactive ion etching (RIE) processes is reported. The optimum exposure dose of EBL process was found to be in the range of 210-240 µC/cm2 due to small enlargement of hole diameter after pattern deve...

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Bibliographic Details
Main Authors:	Rahmasari, Lita, Abdullah, Mohd. Faizol, Md. Zain, Ahmad Rifqi, Hashim, Abdul Manaf
Format:	Article
Language:	English
Published:	Penerbit UKM 2019
Subjects:	TA Engineering (General). Civil engineering (General)
Online Access:	http://eprints.utm.my/id/eprint/89259/1/LitaRahmasari2019_SiliconNanoholeArraysFabricatedbyElectron.pdf http://eprints.utm.my/id/eprint/89259/ http://dx.doi.org/10.17576/jsm-2019-4806-01
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