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Silicon nanohole arrays fabricated by electron beam lithography and reactive ion etching

The fabrication of silicon nanohole (SiNH) using a combination of electron beam lithography (EBL) and reactive ion etching (RIE) processes is reported. The optimum exposure dose of EBL process was found to be in the range of 210-240 µC/cm2 due to small enlargement of hole diameter after pattern deve...

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Main Authors:	Rahmasari, Lita, Abdullah, Mohd. Faizol, Md. Zain, Ahmad Rifqi, Hashim, Abdul Manaf
Format:	Article
Language:	English
Published:	Penerbit UKM 2019
Subjects:	TA Engineering (General). Civil engineering (General)
Online Access:	http://eprints.utm.my/id/eprint/89259/1/LitaRahmasari2019_SiliconNanoholeArraysFabricatedbyElectron.pdf http://eprints.utm.my/id/eprint/89259/ http://dx.doi.org/10.17576/jsm-2019-4806-01
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id	my.utm.89259
record_format	eprints
spelling	my.utm.892592021-02-22T06:01:19Z http://eprints.utm.my/id/eprint/89259/ Silicon nanohole arrays fabricated by electron beam lithography and reactive ion etching Rahmasari, Lita Abdullah, Mohd. Faizol Md. Zain, Ahmad Rifqi Hashim, Abdul Manaf TA Engineering (General). Civil engineering (General) The fabrication of silicon nanohole (SiNH) using a combination of electron beam lithography (EBL) and reactive ion etching (RIE) processes is reported. The optimum exposure dose of EBL process was found to be in the range of 210-240 µC/cm2 due to small enlargement of hole diameter after pattern development process. The anisotropic etching and isotropic etching was achieved at low and high reaction pressures, respectively. As expected, the etching rate increase with time and RF power. A relatively smooth and well-defined NH has been obtained at RF power of 100 W and reaction pressure of 0.08 Torr, which is suitable to be applied for optical waveguide. Penerbit UKM 2019-06 Article PeerReviewed application/pdf en http://eprints.utm.my/id/eprint/89259/1/LitaRahmasari2019_SiliconNanoholeArraysFabricatedbyElectron.pdf Rahmasari, Lita and Abdullah, Mohd. Faizol and Md. Zain, Ahmad Rifqi and Hashim, Abdul Manaf (2019) Silicon nanohole arrays fabricated by electron beam lithography and reactive ion etching. Sains Malaysiana, 48 (6). pp. 1157-1161. ISSN 0126-6039 http://dx.doi.org/10.17576/jsm-2019-4806-01 DOI:10.17576/jsm-2019-4806-01
institution	Universiti Teknologi Malaysia
building	UTM Library
collection	Institutional Repository
continent	Asia
country	Malaysia
content_provider	Universiti Teknologi Malaysia
content_source	UTM Institutional Repository
url_provider	http://eprints.utm.my/
language	English
topic	TA Engineering (General). Civil engineering (General)
spellingShingle	TA Engineering (General). Civil engineering (General) Rahmasari, Lita Abdullah, Mohd. Faizol Md. Zain, Ahmad Rifqi Hashim, Abdul Manaf Silicon nanohole arrays fabricated by electron beam lithography and reactive ion etching
description	The fabrication of silicon nanohole (SiNH) using a combination of electron beam lithography (EBL) and reactive ion etching (RIE) processes is reported. The optimum exposure dose of EBL process was found to be in the range of 210-240 µC/cm2 due to small enlargement of hole diameter after pattern development process. The anisotropic etching and isotropic etching was achieved at low and high reaction pressures, respectively. As expected, the etching rate increase with time and RF power. A relatively smooth and well-defined NH has been obtained at RF power of 100 W and reaction pressure of 0.08 Torr, which is suitable to be applied for optical waveguide.
format	Article
author	Rahmasari, Lita Abdullah, Mohd. Faizol Md. Zain, Ahmad Rifqi Hashim, Abdul Manaf
author_facet	Rahmasari, Lita Abdullah, Mohd. Faizol Md. Zain, Ahmad Rifqi Hashim, Abdul Manaf
author_sort	Rahmasari, Lita
title	Silicon nanohole arrays fabricated by electron beam lithography and reactive ion etching
title_short	Silicon nanohole arrays fabricated by electron beam lithography and reactive ion etching
title_full	Silicon nanohole arrays fabricated by electron beam lithography and reactive ion etching
title_fullStr	Silicon nanohole arrays fabricated by electron beam lithography and reactive ion etching
title_full_unstemmed	Silicon nanohole arrays fabricated by electron beam lithography and reactive ion etching
title_sort	silicon nanohole arrays fabricated by electron beam lithography and reactive ion etching
publisher	Penerbit UKM
publishDate	2019
url	http://eprints.utm.my/id/eprint/89259/1/LitaRahmasari2019_SiliconNanoholeArraysFabricatedbyElectron.pdf http://eprints.utm.my/id/eprint/89259/ http://dx.doi.org/10.17576/jsm-2019-4806-01
_version_	1692991764318650368
score	13.211869

Silicon nanohole arrays fabricated by electron beam lithography and reactive ion etching

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