Silicon nanohole arrays fabricated by electron beam lithography and reactive ion etching
The fabrication of silicon nanohole (SiNH) using a combination of electron beam lithography (EBL) and reactive ion etching (RIE) processes is reported. The optimum exposure dose of EBL process was found to be in the range of 210-240 µC/cm2 due to small enlargement of hole diameter after pattern deve...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Penerbit UKM
2019
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/89259/1/LitaRahmasari2019_SiliconNanoholeArraysFabricatedbyElectron.pdf http://eprints.utm.my/id/eprint/89259/ http://dx.doi.org/10.17576/jsm-2019-4806-01 |
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