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Ion Track Nanolithography Using Thick Cross-Linked Poly(methyl methacrylate) 950 Photoresist

This study shows that poly(methyl methacrylate) (PMMA) 950 thick photoresist is a promising polymer for ion-track nanolithography templates for nanomaterials fabrication resulting in high aspect ratio nanostructures ranging from 100 to 500 with highly selective etch rates when using deep ultraviolet...

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Main Authors: Koukharenko, Elena, Jekaterina , Kuleshova, Fowler, Marcel, Kok, Swee Leong, Tudor, Michael J., Beeby, Stephen P., Nandhakumar, Iris, White, Neil
Format: Article
Published: Jpn. J. Appl. Phys. 2010
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utem.edu.my/id/eprint/4371/
http://jjap.jsap.jp/link?JJAP/49/06GE07/
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spelling my.utem.eprints.43712012-07-19T14:57:28Z http://eprints.utem.edu.my/id/eprint/4371/ Ion Track Nanolithography Using Thick Cross-Linked Poly(methyl methacrylate) 950 Photoresist Koukharenko, Elena Jekaterina , Kuleshova Fowler, Marcel Kok, Swee Leong Tudor, Michael J. Beeby, Stephen P. Nandhakumar, Iris White, Neil TK Electrical engineering. Electronics Nuclear engineering This study shows that poly(methyl methacrylate) (PMMA) 950 thick photoresist is a promising polymer for ion-track nanolithography templates for nanomaterials fabrication resulting in high aspect ratio nanostructures ranging from 100 to 500 with highly selective etch rates when using deep ultraviolet (DUV) cross linking polymerisation prior to the ion-track irradiation. DUV exposure times and post exposure hardbake conditions are crucial factors for achieving high aspect ratio structures. Exposure doses of 6600 mJ/cm2 with post exposure hardbake at 180 °C for 90 s gave promising preliminary results for high aspect ratio nanotemplates using thick layer of PMMA 950 photoresist. Jpn. J. Appl. Phys. 2010 Article PeerReviewed Koukharenko, Elena and Jekaterina , Kuleshova and Fowler, Marcel and Kok, Swee Leong and Tudor, Michael J. and Beeby, Stephen P. and Nandhakumar, Iris and White, Neil (2010) Ion Track Nanolithography Using Thick Cross-Linked Poly(methyl methacrylate) 950 Photoresist. Jpn. J. Appl. Phys., 49. ISSN Online: 1347-4065/ Print: 0021-4922 http://jjap.jsap.jp/link?JJAP/49/06GE07/
institution Universiti Teknikal Malaysia Melaka
building UTEM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknikal Malaysia Melaka
content_source UTEM Institutional Repository
url_provider http://eprints.utem.edu.my/
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Koukharenko, Elena
Jekaterina , Kuleshova
Fowler, Marcel
Kok, Swee Leong
Tudor, Michael J.
Beeby, Stephen P.
Nandhakumar, Iris
White, Neil
Ion Track Nanolithography Using Thick Cross-Linked Poly(methyl methacrylate) 950 Photoresist
description This study shows that poly(methyl methacrylate) (PMMA) 950 thick photoresist is a promising polymer for ion-track nanolithography templates for nanomaterials fabrication resulting in high aspect ratio nanostructures ranging from 100 to 500 with highly selective etch rates when using deep ultraviolet (DUV) cross linking polymerisation prior to the ion-track irradiation. DUV exposure times and post exposure hardbake conditions are crucial factors for achieving high aspect ratio structures. Exposure doses of 6600 mJ/cm2 with post exposure hardbake at 180 °C for 90 s gave promising preliminary results for high aspect ratio nanotemplates using thick layer of PMMA 950 photoresist.
format Article
author Koukharenko, Elena
Jekaterina , Kuleshova
Fowler, Marcel
Kok, Swee Leong
Tudor, Michael J.
Beeby, Stephen P.
Nandhakumar, Iris
White, Neil
author_facet Koukharenko, Elena
Jekaterina , Kuleshova
Fowler, Marcel
Kok, Swee Leong
Tudor, Michael J.
Beeby, Stephen P.
Nandhakumar, Iris
White, Neil
author_sort Koukharenko, Elena
title Ion Track Nanolithography Using Thick Cross-Linked Poly(methyl methacrylate) 950 Photoresist
title_short Ion Track Nanolithography Using Thick Cross-Linked Poly(methyl methacrylate) 950 Photoresist
title_full Ion Track Nanolithography Using Thick Cross-Linked Poly(methyl methacrylate) 950 Photoresist
title_fullStr Ion Track Nanolithography Using Thick Cross-Linked Poly(methyl methacrylate) 950 Photoresist
title_full_unstemmed Ion Track Nanolithography Using Thick Cross-Linked Poly(methyl methacrylate) 950 Photoresist
title_sort ion track nanolithography using thick cross-linked poly(methyl methacrylate) 950 photoresist
publisher Jpn. J. Appl. Phys.
publishDate 2010
url http://eprints.utem.edu.my/id/eprint/4371/
http://jjap.jsap.jp/link?JJAP/49/06GE07/
_version_ 1665905281533476864
score 13.211869

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