Investigation of the effect of anodization time and annealing temperature on the physical properties of ZrO2 thin film on a Si substrate
This research work studied the effects of various anodization times (5, 10, 15, 20 and 25 min) and various annealing temperatures (500, 600, 700, 800 and 900 °C) on ZrO2 thin film on a Si substrate. The ZrO2 thin film was prepared via sputtering and anodization processes on a Si substrate. The exist...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | en_US |
| Published: |
2017
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