Physical and electrical properties of thermal oxidized Sm2O3 gate oxide thin film on Si substrate: Influence of oxidation durations
Growth of 150 nm Sm2O3 films by sputtered pure samarium metal film on silicon substrates and followed by thermal oxidation process in oxygen ambient at 700 °C through various oxidation durations (5 min, 10 min, 15 min and 20 min) has been carried out. The crystallinity of Sm2O3 film and existence of...
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| Main Authors: | , , |
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| Format: | Article |
| Published: |
Elsevier
2016
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| Online Access: | http://eprints.um.edu.my/17443/ http://dx.doi.org/10.1016/j.tsf.2016.03.051 |
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