Thermal oxidation and nitridation of sputtered Zr thin film on Si via N2O gas
Formation of ZrO2 by simultaneous thermal oxidation and nitridation in nitrous oxide of sputtered Zr on Si substrate is reported here for the first time. Sputtered Zr on Si substrate and followed by oxidation and nitridation in nitrous oxide ambient at 700 °C for various durations (5–20 min) have be...
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| Format: | Article |
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Elsevier
2011
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| Online Access: | http://eprints.um.edu.my/12998/ http://www.sciencedirect.com/science/article/pii/S0925838811013235 http://dx.doi.org/10.1016/j.jallcom.2011.06.041 |
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