Cobalt silicide and titanium silicide effects on nano devices
This paper describes growth process of the two silicide Sub-nanometer devices and the different effects of having cobalt silicide and titanium silicide on a Sub-nanometer CMOS devices. On the top of CMOS device gate, metal silicide is developed on-top of the polysilicon to produce an ohmic contact b...
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| Main Authors: | , , , , , |
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| Format: | Conference Proceeding |
| Published: |
2017
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| Online Access: | http://dspace.uniten.edu.my:80/jspui/handle/123456789/5235 |
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