所蔵: Cobalt silicide and titanium silicide effects on nano devices

Cobalt silicide and titanium silicide effects on nano devices

This paper describes growth process of the two silicide Sub-nanometer devices and the different effects of having cobalt silicide and titanium silicide on a Sub-nanometer CMOS devices. On the top of CMOS device gate, metal silicide is developed on-top of the polysilicon to produce an ohmic contact b...

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主要な著者:	Elgomati H.A., Majlis B.Y., Salehuddin F., Ahmad I., Zaharim A., Hamid F.A.
その他の著者:	36536722700
フォーマット:	Conference Paper
出版事項:	2023
主題:	cobalt silicide nanometer NMOS Silicide titanium silicide Aluminum Annealing Carbon dioxide CMOS integrated circuits Cobalt Cobalt compounds Electric contactors Electric properties Electron mobility Metals Ohmic contacts Polysilicon Titanium Titanium nitride Tungsten Wire Aluminum wires Anneal temperatures Annealing process CMOS devices Cobalt layers Cobalt salicide Cobalt silicide Different effects Electrical characterization Fabrication process Gate structure Growth process High resistivity High temperature Metal silicide N2 ambient Nano device Non-existence Polysilicon gates Salicides Silicide surfaces Silicon substrates Silvaco Thin tin Silicides
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Cobalt silicide and titanium silicide effects on nano devices

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