Variability analysis of process parameters on subthreshold swing in vertical DG-MOSFET device
As the MOSFET's size is expected to be shrunk every year, it is difficult to mitigate the short channel effect (SCE) issues arising in the device. The conventional MOSFET's structure is no longer practical to apprehend these types of issues, especially for a device with a very small gate l...
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| Main Authors: | , , , , , |
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2017
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| Online Access: | http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5189 |
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