Work-function tuning on analogue properties of junction-less strained DG-MOSFET
This paper discusses an extensive investigation on the influence of work-function (WF) tuning on analogue properties of the n-type junction-less strained double-gate MOSFET. The investigation on the device has been conducted with fixed level of input parameters operating in saturation mode by taking...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Taylor's University
2023
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| Online Access: | http://eprints.utem.edu.my/id/eprint/27323/2/0019928122023615.PDF http://eprints.utem.edu.my/id/eprint/27323/ https://jestec.taylors.edu.my/Vol%2018%20Issue%201%20February%20%202023/18_1_22.pdf |
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