Extraction of SPICE model for double gate vertical MOSFET
Vertical MOSFETs device have one important disadvantage, which is higher overlap capacitances such as the separated gate-source and gate-drain parasitic capacitances (CGSO and CGDO), which is known to be most crucial to the high-frequency/speed performance but very hard to extract. In this paper pre...
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| Main Authors: | , , , |
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| Format: | Book Section |
| Published: |
IEEE
2009
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/14310/ http://dx.doi.org/10.1109/AMS.2009.129 |
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