Optimization of process parameter variations for 16nm DG-FinFET using Response Surface Methodology-Central Composite Design
Design; FinFET; Leakage currents; Polysilicon; Surface properties; Threshold voltage; Central composite designs; International Technology Roadmap for Semiconductors; Optimization of process parameters; Optimization techniques; Process parameters; Response surface method; Response surface methodology...
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| Main Authors: | , , , , , , , , |
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| Other Authors: | |
| Format: | Conference Paper |
| Published: |
Institute of Physics Publishing
2023
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