Statistical optimization influence on high permittivity gate spacer in 16nm DG-FinFET device / Ameer F. Rosla … [et al.]
In this paper, the effect of high permittivity gate spacer on short channel effects (SCEs) for the 16 nm double-gate finFET is investigated, with the output responses optimized using L9 orthogonal array (OA) Taguchi method. The determination is done through Signal-to-noise ratio to the effectiveness...
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| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Universiti Teknologi MARA
2022
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| Subjects: | |
| Online Access: | https://ir.uitm.edu.my/id/eprint/60588/1/60588.pdf https://ir.uitm.edu.my/id/eprint/60588/ https://jmeche.uitm.edu.my/ |
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