Modeling MOSFETs by using C++
The Metal Oxide Semiconductor Field - Effect Transistors (MOSFET) has become by far the most widely used electronic devices, especially in the design of integrated circuits (ICs), which are circuits fabricated on a single silicon chip. The reason for th...
Saved in:
Main Author: | Roy Stephen, Joel Jimbai. |
---|---|
Format: | Final Year Project Report |
Language: | English English |
Published: |
Universiti Malaysia Sarawak, UNIMAS
2009
|
Subjects: | |
Online Access: | http://ir.unimas.my/id/eprint/6536/1/Modeling%20MOSFETs%20by%20Using%20C%2B%2B%20%2824%20pgs%29.pdf http://ir.unimas.my/id/eprint/6536/7/Roy%20Stephen%20Joel%20ft.pdf http://ir.unimas.my/id/eprint/6536/ |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Time-domain modeling of low-frequency noise in deep-submicrometer MOSFET
by: N.H., Hamid, et al.
Published: (2008) -
Invited paper: modeling of nanoscale MOSFET using MATLAB
by: Arora, Vijay K.
Published: (2009) -
Modeling the effect of velocity saturation in nanoscale MOSFET
by: Tan, Michael Loong Peng
Published: (2006) -
THE MODELING & SIMULATION OF SHORT CHANNEL EFFECTS IN
MOSFETS
by: ABDUL HALIM, ASMAH
Published: (2007) -
Process and Characterization of Strained Silicon MOSFET Incorporating Dielectric Pocket (SDP-MOSFET)
by: Mohammed Napiah, Zul Atfyi Fauzan, et al.
Published: (2011)