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Modeling MOSFETs by using C++

The Metal Oxide Semiconductor Field - Effect Transistors (MOSFET) has become by far the most widely used electronic devices, especially in the design of integrated circuits (ICs), which are circuits fabricated on a single silicon chip. The reason for th...

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Main Author:	Roy Stephen, Joel Jimbai.
Format:	Final Year Project Report
Language:	English English
Published:	Universiti Malaysia Sarawak, UNIMAS 2009
Subjects:	T Technology (General) TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://ir.unimas.my/id/eprint/6536/1/Modeling%20MOSFETs%20by%20Using%20C%2B%2B%20%2824%20pgs%29.pdf http://ir.unimas.my/id/eprint/6536/7/Roy%20Stephen%20Joel%20ft.pdf http://ir.unimas.my/id/eprint/6536/
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id	my.unimas.ir.6536
record_format	eprints
spelling	my.unimas.ir.65362024-03-18T04:31:59Z http://ir.unimas.my/id/eprint/6536/ Modeling MOSFETs by using C++ Roy Stephen, Joel Jimbai. T Technology (General) TK Electrical engineering. Electronics Nuclear engineering The Metal Oxide Semiconductor Field - Effect Transistors (MOSFET) has become by far the most widely used electronic devices, especially in the design of integrated circuits (ICs), which are circuits fabricated on a single silicon chip. The reason for the label metal-oxide- semiconductor FET is: metal for the drains source and gate connection to the proper surface - in particular, the gate terminal and the control to be offered by the surface are of the contact, structure on which the n-and p-type regions are diffused. Thus, in this paper, the characteristics of the MOSFETs are briefly discussed at which one of the objectives is to model these characteristics by using software, Microsoft Visual C++ and in this project, the drain characteristics of both NMOS and PMOS is modelled . As goes further this paper, the created C++ programming for the inverter which are then further implement to verify the operation of pairs of gate logics ; AND/NAND, OR/NOR and XOR/XNOR and also Half - Adder. Nevertheless, the constraints faced by the author are concluded and few recommendations are suggested for future apprentices. Universiti Malaysia Sarawak, UNIMAS 2009 Final Year Project Report NonPeerReviewed text en http://ir.unimas.my/id/eprint/6536/1/Modeling%20MOSFETs%20by%20Using%20C%2B%2B%20%2824%20pgs%29.pdf text en http://ir.unimas.my/id/eprint/6536/7/Roy%20Stephen%20Joel%20ft.pdf Roy Stephen, Joel Jimbai. (2009) Modeling MOSFETs by using C++. [Final Year Project Report] (Unpublished)
institution	Universiti Malaysia Sarawak
building	Centre for Academic Information Services (CAIS)
collection	Institutional Repository
continent	Asia
country	Malaysia
content_provider	Universiti Malaysia Sarawak
content_source	UNIMAS Institutional Repository
url_provider	http://ir.unimas.my/
language	English English
topic	T Technology (General) TK Electrical engineering. Electronics Nuclear engineering
spellingShingle	T Technology (General) TK Electrical engineering. Electronics Nuclear engineering Roy Stephen, Joel Jimbai. Modeling MOSFETs by using C++
description	The Metal Oxide Semiconductor Field - Effect Transistors (MOSFET) has become by far the most widely used electronic devices, especially in the design of integrated circuits (ICs), which are circuits fabricated on a single silicon chip. The reason for the label metal-oxide- semiconductor FET is: metal for the drains source and gate connection to the proper surface - in particular, the gate terminal and the control to be offered by the surface are of the contact, structure on which the n-and p-type regions are diffused. Thus, in this paper, the characteristics of the MOSFETs are briefly discussed at which one of the objectives is to model these characteristics by using software, Microsoft Visual C++ and in this project, the drain characteristics of both NMOS and PMOS is modelled . As goes further this paper, the created C++ programming for the inverter which are then further implement to verify the operation of pairs of gate logics ; AND/NAND, OR/NOR and XOR/XNOR and also Half - Adder. Nevertheless, the constraints faced by the author are concluded and few recommendations are suggested for future apprentices.
format	Final Year Project Report
author	Roy Stephen, Joel Jimbai.
author_facet	Roy Stephen, Joel Jimbai.
author_sort	Roy Stephen, Joel Jimbai.
title	Modeling MOSFETs by using C++
title_short	Modeling MOSFETs by using C++
title_full	Modeling MOSFETs by using C++
title_fullStr	Modeling MOSFETs by using C++
title_full_unstemmed	Modeling MOSFETs by using C++
title_sort	modeling mosfets by using c++
publisher	Universiti Malaysia Sarawak, UNIMAS
publishDate	2009
url	http://ir.unimas.my/id/eprint/6536/1/Modeling%20MOSFETs%20by%20Using%20C%2B%2B%20%2824%20pgs%29.pdf http://ir.unimas.my/id/eprint/6536/7/Roy%20Stephen%20Joel%20ft.pdf http://ir.unimas.my/id/eprint/6536/
_version_	1794643955604783104
score	13.211869

Modeling MOSFETs by using C++

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