Impact of strain on electrical performance of Silicon Nanowire MOSFET
A 3-Dimensional (3D) strained Silicon Nanowire MOSFET simulation and inversion charge model are presented. The simulation studies are conducted based on electrical parameters of nanowires such as current and threshold voltage using a ATLAS TCAD simulator. The inversion charge model with Germanium fr...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Conference or Workshop Item |
| Published: |
2017
|
| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/97135/ http://dx.doi.org/10.1109/RSM.2017.8069117 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|