صورة الغلاف

Extended MASTAR modeling of DIBL in UTB and UTBB SOI MOSFETs

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محفوظ في:

التفاصيل البيبلوغرافية
المؤلفون الرئيسيون:	Mohd Khairuddin, Md Arshad, Dr., Raskin, Jean-Pierre, Prof., Kilchytska, Valeriya, Dr., Andrieu, François, Dr., Scheiblin, Pascal, Faynot, O., Flandre, Denis, Prof.
مؤلفون آخرون:	mohd.khairuddin@unimap.edu.my
التنسيق:	مقال
اللغة:	English
منشور في:	Institute of Electrical and Electronics Engineers (IEEE) 2013
الموضوعات:	Drain-induced barrier lowering (DIBL) fully depleted silicon-on-insulator (FDSOI) MOSFETs ultrathin silicon body and thin buried oxide (UTBB) MASTAR model Substrate depletion depth (T Sub) Substrate/buried oxide (BOX) interface space-charge condition Ultrathin silicon body (UTB)
الوصول للمادة أونلاين:	http://dspace.unimap.edu.my/xmlui/handle/123456789/23993
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!

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