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Extended MASTAR modeling of DIBL in UTB and UTBB SOI MOSFETs

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Main Authors:	Mohd Khairuddin, Md Arshad, Dr., Raskin, Jean-Pierre, Prof., Kilchytska, Valeriya, Dr., Andrieu, François, Dr., Scheiblin, Pascal, Faynot, O., Flandre, Denis, Prof.
其他作者:	mohd.khairuddin@unimap.edu.my
格式:	Article
语言:	English
出版:	Institute of Electrical and Electronics Engineers (IEEE) 2013
主题:	Drain-induced barrier lowering (DIBL) fully depleted silicon-on-insulator (FDSOI) MOSFETs ultrathin silicon body and thin buried oxide (UTBB) MASTAR model Substrate depletion depth (T Sub) Substrate/buried oxide (BOX) interface space-charge condition Ultrathin silicon body (UTB)
在线阅读:	http://dspace.unimap.edu.my/xmlui/handle/123456789/23993
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