Polysilicon Process Development – The Effect Of PECVD Process Parameters On The Film Characteristics
Thin polycrystalline silicon film has been used in the wide range of applications in the production of integrated circuits and other electronic products. Traditionally, polycrystalline silicon is deposited using Low Pressure Chemical Vapor Deposition (LPCVD) process at temperatures around 600 – 7...
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| フォーマット: | Learning Object |
| 言語: | English |
| 出版事項: |
Universiti Malaysia Perlis
2008
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| オンライン･アクセス: | http://dspace.unimap.edu.my/xmlui/handle/123456789/1350 |
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