Extended MASTAR modeling of DIBL in UTB and UTBB SOI MOSFETs

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Main Authors: Mohd Khairuddin, Md Arshad, Dr., Raskin, Jean-Pierre, Prof., Kilchytska, Valeriya, Dr., Andrieu, François, Dr., Scheiblin, Pascal, Faynot, O., Flandre, Denis, Prof.
Other Authors: mohd.khairuddin@unimap.edu.my
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers (IEEE) 2013
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Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/23993
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spelling my.unimap-239932013-03-08T02:25:18Z Extended MASTAR modeling of DIBL in UTB and UTBB SOI MOSFETs Mohd Khairuddin, Md Arshad, Dr. Raskin, Jean-Pierre, Prof. Kilchytska, Valeriya, Dr. Andrieu, François, Dr. Scheiblin, Pascal Faynot, O. Flandre, Denis, Prof. mohd.khairuddin@unimap.edu.my jean-pierre.raskin@uclouvain.be pascal.scheiblin@cea.fr Drain-induced barrier lowering (DIBL) fully depleted silicon-on-insulator (FDSOI) MOSFETs ultrathin silicon body and thin buried oxide (UTBB) MASTAR model Substrate depletion depth (T Sub) Substrate/buried oxide (BOX) interface space-charge condition Ultrathin silicon body (UTB) Link to publisher's homepage at http://ieeexplore.ieee.org/ This paper analyzes and models the drain-induced barrier lowering (DIBL) for ultrathin silicon body and ultrathin silicon body and thin buried oxide (UTBB) SOI MOSFETs. The channel depth appears as the primary factor in controlling DIBL when the substrate is in accumulation or inversion, whereas space-charge thickness in the substrate is the dominant parameter when the substrate is depleted. Under substrate depletion condition, UTBB devices lose their low DIBL features due to the increased coupling through the effective insulating layer underneath the transistor channel. The proposed model extending MASTAR equations is in agreement with experimental DIBL. 2013-03-08T01:50:00Z 2013-03-08T01:50:00Z 2012-01 Article IEEE Transactions on Electron Devices, vol. 59 (1), 2012, pages 247-251 0018-9383 ieexplore.ieee.org/xpl/periodicals.jsp http://hdl.handle.net/123456789/23993 en Institute of Electrical and Electronics Engineers (IEEE)
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Drain-induced barrier lowering (DIBL)
fully depleted silicon-on-insulator (FDSOI) MOSFETs
ultrathin silicon body and thin buried oxide (UTBB)
MASTAR model
Substrate depletion depth (T Sub)
Substrate/buried oxide (BOX) interface space-charge condition
Ultrathin silicon body (UTB)
spellingShingle Drain-induced barrier lowering (DIBL)
fully depleted silicon-on-insulator (FDSOI) MOSFETs
ultrathin silicon body and thin buried oxide (UTBB)
MASTAR model
Substrate depletion depth (T Sub)
Substrate/buried oxide (BOX) interface space-charge condition
Ultrathin silicon body (UTB)
Mohd Khairuddin, Md Arshad, Dr.
Raskin, Jean-Pierre, Prof.
Kilchytska, Valeriya, Dr.
Andrieu, François, Dr.
Scheiblin, Pascal
Faynot, O.
Flandre, Denis, Prof.
Extended MASTAR modeling of DIBL in UTB and UTBB SOI MOSFETs
description Link to publisher's homepage at http://ieeexplore.ieee.org/
author2 mohd.khairuddin@unimap.edu.my
author_facet mohd.khairuddin@unimap.edu.my
Mohd Khairuddin, Md Arshad, Dr.
Raskin, Jean-Pierre, Prof.
Kilchytska, Valeriya, Dr.
Andrieu, François, Dr.
Scheiblin, Pascal
Faynot, O.
Flandre, Denis, Prof.
format Article
author Mohd Khairuddin, Md Arshad, Dr.
Raskin, Jean-Pierre, Prof.
Kilchytska, Valeriya, Dr.
Andrieu, François, Dr.
Scheiblin, Pascal
Faynot, O.
Flandre, Denis, Prof.
author_sort Mohd Khairuddin, Md Arshad, Dr.
title Extended MASTAR modeling of DIBL in UTB and UTBB SOI MOSFETs
title_short Extended MASTAR modeling of DIBL in UTB and UTBB SOI MOSFETs
title_full Extended MASTAR modeling of DIBL in UTB and UTBB SOI MOSFETs
title_fullStr Extended MASTAR modeling of DIBL in UTB and UTBB SOI MOSFETs
title_full_unstemmed Extended MASTAR modeling of DIBL in UTB and UTBB SOI MOSFETs
title_sort extended mastar modeling of dibl in utb and utbb soi mosfets
publisher Institute of Electrical and Electronics Engineers (IEEE)
publishDate 2013
url http://dspace.unimap.edu.my/xmlui/handle/123456789/23993
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score 13.211869