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Study of Semi-Recessed LOCOS for Quasi-nanoscale CMOS Device Isolation

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Bibliographic Details
Main Author: Mohamad Idzham Abd Sani
Other Authors: Zaliman Sauli, P.M. (Advisor)
Format: Learning Object
Language:English
Published: Universiti Malaysia Perlis 2008
Subjects:
Metal oxide semiconductors, Complementary
CMOS device isolation
Semiconductor manufacturing
Silicon
Local oxidation of silicon (LOCOS)
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/1362
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spelling my.unimap-13622008-10-29T06:33:31Z Study of Semi-Recessed LOCOS for Quasi-nanoscale CMOS Device Isolation Mohamad Idzham Abd Sani Zaliman Sauli, P.M. (Advisor) Metal oxide semiconductors, Complementary CMOS device isolation Semiconductor manufacturing Silicon Local oxidation of silicon (LOCOS) Semiconductor manufacturing Access is limited to UniMAP community. This project is entitled as semi-recessed LOCOS for CMOS device isolation. Local oxidation (LOCOS) technique is a widely used method for device isolation in semiconductor process integration. It is a simple, cheap yet and very effective to electrically isolating the highly packed devices down to 0.25um CMOS technology. Even though, the trench isolation is getting more popularity for 0.25um CMOS generation and below. The LOCOS isolation, due to its simplicity is still attractive for further scaling and improvement in semiconductor industry. The project is including several steps of process to produce the semi-recessed LOCOS. The main purpose of this project is to produces the small bird’s beak and varies on the pad oxide thickness whereby, the measurement is done using EDX (Energy dispersive X-ray spectroscopy) with the length setting 20 micron from boundary of an active area. From the results, it proved that the bird’s beak length is much depend on the pad oxide thickness whereby, the pad oxide should be at least 1/3 nitride thickness to work as a stress relief layer. 2008-07-02T06:35:23Z 2008-07-02T06:35:23Z 2007-03 Learning Object http://hdl.handle.net/123456789/1362 en Universiti Malaysia Perlis School of Microelectronic Engineering
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Metal oxide semiconductors, Complementary
CMOS device isolation
Semiconductor manufacturing
Silicon
Local oxidation of silicon (LOCOS)
Semiconductor manufacturing
spellingShingle Metal oxide semiconductors, Complementary
CMOS device isolation
Semiconductor manufacturing
Silicon
Local oxidation of silicon (LOCOS)
Semiconductor manufacturing
Mohamad Idzham Abd Sani
Study of Semi-Recessed LOCOS for Quasi-nanoscale CMOS Device Isolation
description Access is limited to UniMAP community.
author2 Zaliman Sauli, P.M. (Advisor)
author_facet Zaliman Sauli, P.M. (Advisor)
Mohamad Idzham Abd Sani
format Learning Object
author Mohamad Idzham Abd Sani
author_sort Mohamad Idzham Abd Sani
title Study of Semi-Recessed LOCOS for Quasi-nanoscale CMOS Device Isolation
title_short Study of Semi-Recessed LOCOS for Quasi-nanoscale CMOS Device Isolation
title_full Study of Semi-Recessed LOCOS for Quasi-nanoscale CMOS Device Isolation
title_fullStr Study of Semi-Recessed LOCOS for Quasi-nanoscale CMOS Device Isolation
title_full_unstemmed Study of Semi-Recessed LOCOS for Quasi-nanoscale CMOS Device Isolation
title_sort study of semi-recessed locos for quasi-nanoscale cmos device isolation
publisher Universiti Malaysia Perlis
publishDate 2008
url http://dspace.unimap.edu.my/xmlui/handle/123456789/1362
_version_ 1643787265927806976
score 13.222552

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