Growth of non-polar (11-20) a-plane GaN based leds grown on (1-120) r-plane sapphire substrate via MOCVD / Anas Kamarundzaman

Conventional gallium nitride (GaN)-based light-emitting diodes (LEDs), commonly grown in the c-plane direction suffer from the huge built-in electric field from spontaneous and piezoelectric polarisation, which cause the energy-band bending in the energy band diagram. Motivated to avoid the undesira...

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主要作者: Anas , Kamarundzaman
格式: Thesis
出版: 2022
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在线阅读:http://studentsrepo.um.edu.my/15197/2/Anas_Kamarundzaman.pdf
http://studentsrepo.um.edu.my/15197/1/Anas_Kamarundzaman.pdf
http://studentsrepo.um.edu.my/15197/
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