Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN
Indium Tin Oxide films were deposited directly on p-type Gallium Nitride film using the electron beam deposition method at different substrate temperatures from 25 °C to 550 °C. The structural, optical and Hall measurements represent a direct correlation of ITO properties with the substrate temperat...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Published: |
Elsevier
2021
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| Subjects: | |
| Online Access: | http://eprints.um.edu.my/25889/ https://doi.org/10.1016/j.apsusc.2020.148406 |
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